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The PS2562-1-V-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode with an NPN silicon photodarlington transistor. The device provides high isolation voltage of 5000 Vrms and supports through-hole mounting in a plastic DIP package. Key electrical parameters include a maximum collector-emitter voltage of 40 V, a maximum collector current of 200 mA, and a typical current transfer ratio ranging from 200% to 2000%. The forward voltage is 1.4 V at a forward current of 80 mA, with rise and fall times of 100 µs.
Verify the specific suffix 'V-A' against the official Renesas datasheet to confirm compliance with RoHS directives and lead-free specifications. Ensure the ordering part number matches the required DIP-4 through-hole package configuration. Cross-reference safety approvals such as UL, CSA, and BSI if regulatory certification is mandatory for the target application environment.
Select this component when high gain is required due to its photodarlington output architecture compared to standard phototransistors. Consider the 100 µs switching speed limitations for timing-critical applications. Verify that the 80 mA forward current rating aligns with the driving circuit capabilities and thermal dissipation requirements within the operating temperature range.
This part belongs to the PS2562 series of high isolation voltage Darlington type multi photocouplers. It is distinct from surface-mount variants like the PS2562L series and faster switching models like the PS2561 series. The product line is designed for general-purpose isolation in industrial and consumer electronics where high CTR is beneficial.
Public confirmed substitute part numbers are not available in the provided documentation.