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The PS2565L2-1-V-F3-A is a surface-mount optocoupler from Renesas, featuring an NPN phototransistor output and a GaAs LED input. It provides a high isolation voltage of 5000 Vrms and supports a forward current of 10 mA with a forward voltage of 1.17 V. The device offers a typical current transfer ratio of 200%, with switching times of 3 μs rise and 5 μs fall. It handles up to 50 mA collector current and 80 V collector-emitter voltage, utilizing a Gull-wing lead bending design for extended creepage distance.
Verify the specific suffix -V-F3-A against official Renesas documentation to confirm the exact tape and reel packaging configuration and compliance status. Ensure the procurement channel sources directly from authorized distributors or Renesas to guarantee component authenticity and traceability. Cross-reference the part number with the latest datasheet revision to confirm pinout and mechanical dimensions match your PCB layout requirements before finalizing orders.
Select this component when high isolation voltage and fast switching are required in a surface-mount form factor. The Gull-wing package is suitable for applications needing enhanced creepage distance compared to standard SOIC packages. Consider the 200% typical CTR for efficient drive requirements and verify that the 5000 Vrms rating meets the safety standards of the target application environment.
This part belongs to the PS2565L series of optically coupled isolators manufactured by Renesas Electronics Corporation. The series utilizes GaAs light emitting diodes paired with NPN silicon phototransistors. The L2 variant specifically denotes a lead bending type with Gull-wing leads for surface mount technology, distinguishing it from through-hole or other surface mount variants within the broader product family.
Direct substitutes include PS2565L2-1-F3-A and PS2565L2-1-F3-A-L from Renesas. Verify compatibility regarding packaging variations such as tape and reel specifications. Ensure replacement parts maintain the same 5000 Vrms isolation rating and NPN phototransistor output characteristics to preserve circuit functionality.
The typical current transfer ratio is 200%.
No, it uses a Gull-wing lead bending type package designed for long creepage distance.
The maximum collector-emitter voltage is 80 V.