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The PS2761B-1Y-F3-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a compact SOP-4 package. The device provides high isolation voltage of 3750 Vrms and operates over an extended temperature range from -55°C to +110°C. Key electrical parameters include a collector-emitter saturation voltage of 300 mV, forward current of 5 mA, and typical switching times of 5 µs for both rise and fall.
Verify the specific suffix 'F3' corresponds to the required tape and reel packaging configuration, as standard versions may differ in shipping format. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure the SOP-4 footprint matches the target PCB layout dimensions exactly. Cross-reference the part number with the latest Renesas lifecycle notices to confirm availability and long-term supply stability for production runs.
Select this component when high isolation voltage and fast switching speeds are required in a small surface-mount form factor. The NPN phototransistor output is suitable for interfacing with standard logic circuits. Consider the 3750 Vrms isolation rating for safety-critical applications. The wide temperature range makes it appropriate for harsh industrial environments where thermal stability is essential for reliable operation.
This device belongs to the PS2761B series of NECO (NEC Optocoupler) products. The series is characterized by its use of GaAs LEDs and silicon phototransistors to achieve high performance in a compact package. The SOP-4 variant offers a balance between pin count and isolation distance, making it a common choice for density-constrained designs requiring galvanic isolation.
PS2761B-1-F3-L-A is a verified substitute within the same product family offering identical functional specifications.