SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PS2801-1-F3-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a compact SSOP-4 surface-mount package. The device provides high isolation voltage of 2500 Vrms, ensuring effective electrical separation between input and output circuits. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a forward current of 50 mA, and a typical rise time of 3 μs with a fall time of 5 μs. The unit operates within a temperature range of -55°C to +100°C and features a current transfer ratio ranging from 100% to 300%.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm specific suffix variations match application requirements. Check current availability status as supply may be restricted. Ensure compliance with relevant safety certifications such as UL, CSA, BSI, and VDE standards before integration.
Select this component for applications requiring single-channel isolation in space-constrained designs. The SSOP-4 package suits high-density PCB layouts. Consider the 80 V collector-emitter voltage limit and 50 mA current ratings when designing drive circuits. Verify thermal management capabilities within the specified operating temperature range.
This part belongs to the PS2801 series of high-isolation voltage photocouplers. The series utilizes plastic SSOP packages available in various pin configurations to support different channel counts. These devices are designed for general-purpose isolation tasks where small form factor and reliable performance are critical.
Consult official cross-reference documentation for verified substitutes. Direct replacements must maintain identical pinout, isolation voltage, and package dimensions. Verify functional equivalence regarding speed and current ratings before substitution.