SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PS2801C-1-V-F3-P-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a compact SSOP-4 surface-mount package. The device provides high isolation voltage of 2500 Vrms and supports a maximum collector-emitter voltage of 80 V. Key electrical parameters include a forward current of 5 mA, forward voltage of 1.2 V, and power dissipation of 180 mW. Switching characteristics feature a typical rise time of 5 µs and fall time of 7 µs. The unit operates within a temperature range of -55°C to +100°C.
Verify component status as the datasheet indicates a discontinued lifecycle. Confirm availability through authorized distributors or surplus channels. Ensure compatibility with existing designs due to limited support for new implementations. Check specific suffix variations for tape and reel packaging requirements if applicable.
Select this component for applications requiring single-channel isolation in a small form factor. Consider the 5 mA forward current requirement when designing input drive circuits. Evaluate the 180 mW power dissipation limit against thermal constraints. Verify that the 2500 Vrms isolation rating meets safety standards for the target application environment.
This part belongs to the PS2801C series of high-isolation voltage photocouplers. It shares architectural similarities with other members like the PS2801C-1 but differs in packaging and manufacturing specifications. The series is characterized by its use of GaAs LEDs and NPN phototransistors in SSOP packages for density-critical designs.
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for equivalent single-channel transistor output optocouplers with matching isolation and package dimensions.