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The PS2861B-1Y-F3-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a 4-pin SSOP package. Key electrical parameters include a collector-emitter voltage of 70 V, a maximum collector current of 50 mA, and a forward voltage of 1.1 V at 5 mA. The device provides high isolation with a rated insulation voltage of 3750 Vrms. It features typical switching times of 4 μs for rise and 5 μs for fall. The unit supports an operating ambient temperature range from -55°C to +110°C and has a power dissipation rating of 180 mW.
Verify component authenticity through authorized channels due to market availability variations. Confirm specific suffix designations match exact packaging and safety certification requirements. Check current lifecycle status as components may transition to non-recommended-for-new-design states. Ensure compliance with relevant regional safety standards before integration.
Select this component for applications requiring robust galvanic isolation in compact form factors. The SSOP package facilitates automated assembly in space-constrained designs. Verify that the 3750 Vrms isolation rating meets system safety requirements. Consider the 110°C operating limit for thermal management in enclosed industrial enclosures.
This part belongs to the PS2861B-1 series of transistor output optocouplers. The series is characterized by high isolation performance and reliability in industrial applications. Renesas Electronics produces this family to provide stable signal transmission across isolated boundaries while maintaining small physical footprints for modern electronic assemblies.
PS2861B-1Y-V-F3-L-A