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The PS2861B-1Y-V-F3-M-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a shielded SSOP-4 package to minimize electromagnetic interference. The device provides a high isolation voltage of 3750 Vrms, ensuring robust electrical separation between input and output circuits. Key electrical parameters include a maximum collector-emitter voltage of 70 V, a collector current capacity of 50 mA, and a forward voltage of 1.1 V at a 5 mA forward current. The unit operates reliably across an ambient temperature range from -55°C to +100°C.
Verify the specific suffix M-A against official Renesas documentation to confirm lead compliance and packaging details. Confirm the component status as it may be subject to lifecycle changes. Ensure the ordering part number matches the exact pin configuration and thermal specifications required for the target application board layout.
Select this component when a cost-effective solution with moderate isolation requirements is needed. The 3750 Vrms rating suits applications where extreme high-voltage isolation is not critical. Consider the 5 us fall time for timing-sensitive designs. Verify that the SSOP-4 footprint aligns with existing PCB constraints and that the operating temperature range meets environmental demands.
This part belongs to the PS2861B-1 series of photo couplers designed for general-purpose isolation. The series is characterized by its compact form factor and reliable performance in industrial environments. Renesas utilizes standard semiconductor processes to ensure consistency across the product line, focusing on stability rather than ultra-high-speed performance.
Direct replacements must match the 3750 Vrms isolation, SSOP-4 package, and NPN output type. Verify compatibility with existing circuit biasing conditions. Cross-reference with other Renesas PS28xx series variants if pinout or speed characteristics differ.