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The PSB7530ZDW is a single N-channel Power MOSFET from Infineon Technologies, utilizing StrongIRFET technology and housed in a TO-247 through-hole package. It features a maximum drain-source voltage of 60V and a continuous drain current of 195A at 25°C. The device exhibits a maximum on-resistance of 2mΩ at 10V gate drive and supports a total power dissipation of 341W. Key electrical parameters include a typical gate charge of 274nC at 10V, a gate-drain charge of 83nC, and a thermal resistance junction-to-case of 0.44K/W. The component operates within a temperature range of -55°C to 175°C with a threshold voltage between 2.1V and 3.7V.
Verify the specific ordering suffix ZDW against the official datasheet to confirm package type and moisture sensitivity level. Ensure compatibility with TO-247 mounting requirements and check for RoHS compliance status as indicated in the product documentation. Confirm that the source provides valid traceability for the Infineon brand component.
Select this component for applications requiring high current handling up to 195A and low voltage operation at 60V. Consider the thermal resistance of 0.44K/W for heat sink design. Evaluate the gate charge characteristics for switching speed requirements in power conversion circuits.
This part belongs to the IRFP series of N-channel MOSFETs, designed for general-purpose power switching. It represents Infineon's StrongIRFET family, focusing on reducing on-resistance while maintaining robust avalanche capability. The TO-247 package facilitates effective thermal dissipation for high-power industrial applications.
Consult the official datasheet for direct pin-compatible substitutes within the same voltage and current ratings. Verify thermal and electrical specifications match before substitution.