PSS25SA2FT

Overview

The PSS25SA2FT is a silicon IGBT module manufactured by Mitsubishi Electric, categorized under Discrete and Power Modules. It features a Large DIPIPM Version 6 configuration with a 6-PAC arrangement. The device supports a collector-emitter maximum voltage (VCEO) of 1.2 kV and delivers a continuous collector current of 25 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 103 W. The module operates within a temperature range of -30°C to +100°C and utilizes screw mount installation.

Feature Summary

• Utilizes Mitsubishi Electric silicon IGBT technology for discrete power switching applications.
• Designed in a Large DIPIPM Version 6 package format for standardized mounting integration.
• Provides a six-pack circuit configuration suitable for complex inverter or rectifier topologies.

Applications

• Industrial motor drive systems requiring six-pack IGBT configurations
• Power conversion units utilizing 1.2 kV silicon modules
• Equipment compatible with Large DIPIPM Version 6 mechanical footprints

Procurement Notes

Verify the manufacturer designation carefully, as official documentation lists Mitsubishi Electric as the producer for part number PSS25SA2FT. Confirm that the required 6-PAC configuration and screw mount style align with your system design. Ensure thermal management solutions support the specified 103 W power dissipation and operating temperature limits of -30°C to +100°C before finalizing component selection.

Selection Notes

Select this component when a 1.2 kV, 25 A silicon IGBT module with a six-pack topology is required. The 1.5 V saturation voltage indicates specific conduction loss characteristics suitable for certain efficiency profiles. Verify compatibility with the Large DIPIPM Version 6 form factor and ensure the application environment remains within the stated -30°C to +100°C operational temperature range for reliable performance.

Part Context

This component belongs to the broader category of IGBT Silicon Modules produced by Mitsubishi Electric. It falls under the sub-category of Discrete and Power Modules, specifically designed for high-power switching applications. The Large DIPIPM Version 6 packaging standard facilitates integration into industrial power electronics systems requiring robust, screw-mounted semiconductor solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Cross-referencing requires matching the 1.2 kV voltage rating, 25 A current capacity, 103 W power dissipation, and Large DIPIPM Version 6 mechanical footprint. Consult official Mitsubishi Electric documentation for qualified alternatives.