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The PUMB1/DG/B4X is a dual N-channel MOSFET array manufactured by Nexperia USA Inc. It integrates two independent transistors within a single SOT-363 surface-mount package, designed for low-voltage switching applications. The device features a drain-source voltage rating of 20 V and a continuous drain current capacity of 3.6 A. Key electrical characteristics include a maximum on-state resistance of 50 milliohms at a gate-source voltage of 4.5 V, ensuring efficient power handling with minimal thermal generation. The component operates reliably across an extended temperature range from -55 °C to +150 °C.
Verify the specific suffix DG/B4X against official Nexperia documentation to confirm tape-and-reel packaging specifications and binning details. Ensure compatibility with automated pick-and-place equipment regarding the SOT-363 package dimensions. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when space-constrained designs require dual N-channel switching functionality. The SOT-363 package offers a small outline suitable for dense PCB layouts. Evaluate the 50 milliohm on-resistance against thermal requirements to ensure adequate heat dissipation without additional cooling measures. Confirm that the 20 V voltage rating aligns with the system's supply voltage margins.
This device belongs to Nexperia's portfolio of dual MOSFET arrays, engineered to replace discrete transistor pairs. The integration reduces board space and simplifies assembly processes. The SOT-363 form factor is widely adopted in mobile and handheld devices where miniaturization is critical. This specific variant focuses on balancing current handling capabilities with low conduction losses.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Nexperia technical support or authorized distributor databases for equivalent dual N-channel MOSFETs in SOT-363 packages with matching electrical ratings.