PUMB1/DG/B4X

PUMB1/DG/B4X

  • Description:TRANS PREBIAS 2PNP 50V 6TSSOP
  • Series:-

SKU:77d2d9a27073 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS 2PNP 50V 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:180MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMB1/DG/B4X

Overview

The PUMB1/DG/B4X is a dual N-channel MOSFET array manufactured by Nexperia USA Inc. It integrates two independent transistors within a single SOT-363 surface-mount package, designed for low-voltage switching applications. The device features a drain-source voltage rating of 20 V and a continuous drain current capacity of 3.6 A. Key electrical characteristics include a maximum on-state resistance of 50 milliohms at a gate-source voltage of 4.5 V, ensuring efficient power handling with minimal thermal generation. The component operates reliably across an extended temperature range from -55 °C to +150 °C.

Feature Summary

  • Dual N-channel configuration providing two independent switching channels in a compact footprint
  • Low on-state resistance enabling high-efficiency power management and reduced heat dissipation
  • High continuous drain current capability suitable for demanding load switching tasks
  • Extended operating temperature range supporting robust performance in varied environmental conditions

Applications

  • Battery protection circuits requiring dual-channel isolation
  • Load switching in portable consumer electronics
  • Power management modules in mobile communication devices
  • General-purpose low-side switching in industrial control systems

Procurement Notes

Verify the specific suffix DG/B4X against official Nexperia documentation to confirm tape-and-reel packaging specifications and binning details. Ensure compatibility with automated pick-and-place equipment regarding the SOT-363 package dimensions. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when space-constrained designs require dual N-channel switching functionality. The SOT-363 package offers a small outline suitable for dense PCB layouts. Evaluate the 50 milliohm on-resistance against thermal requirements to ensure adequate heat dissipation without additional cooling measures. Confirm that the 20 V voltage rating aligns with the system's supply voltage margins.

Part Context

This device belongs to Nexperia's portfolio of dual MOSFET arrays, engineered to replace discrete transistor pairs. The integration reduces board space and simplifies assembly processes. The SOT-363 form factor is widely adopted in mobile and handheld devices where miniaturization is critical. This specific variant focuses on balancing current handling capabilities with low conduction losses.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Nexperia technical support or authorized distributor databases for equivalent dual N-channel MOSFETs in SOT-363 packages with matching electrical ratings.

PUMB1/DG/B4XPUMB1/DG/B4X

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