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The PUMB10 is a PNP/PNP double Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88) surface-mounted package. It integrates two PNP transistors with built-in bias resistors, specifically R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature. The component operates within a junction temperature range of -65 °C to +150 °C and features a transition frequency of 180 MHz.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging configuration. Confirm that the AEC-Q101 qualification status aligns with target automotive application requirements. Check for any recent revision history updates regarding package designation changes from SOT363 to SOT363-3.
Select this component when space-constrained designs require dual PNP switching with integrated base drive resistors. Ensure the required input resistance matches the fixed 2.2 kΩ value. Verify that the -50 V breakdown voltage meets circuit stress margins. Consider thermal derating curves if operating near maximum power dissipation limits.
This part belongs to Nexperia's Resistor-Equipped Transistor family designed for digital signal processing and interface control. It serves as a compact alternative to discrete resistor-transistor networks. Complementary NPN/NPN and NPN/PNP variants are available in similar packages for balanced design needs.
Direct functional equivalents include the PUMD10 (NPN/PNP) and PUMH10 (NPN/NPN) within the same RET family. Cross-reference pinout compatibility carefully when substituting with other SOT363-3 devices.