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The PUMB11-QF is a PNP/PNP Resistor-Equipped Transistor (RET) in a TSSOP6 (SOT363-3) package. It features two integrated PNP transistors with built-in bias resistors, R1 and R2, both nominally 10 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -100 mA per transistor. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. Qualified under AEC-Q101, it operates within an ambient temperature range of -65 °C to 150 °C.
Verify the specific suffix 'F' against the official Nexperia datasheet to confirm packaging details such as reel or cut tape specifications. Ensure the ordering code matches the required quantity format. Confirm that the AEC-Q101 qualification meets the specific automotive grade requirements of the target application before finalizing procurement.
Select this component when space-constrained designs require dual PNP switching with integrated base resistors. The 10 kΩ internal resistors eliminate external biasing components. Verify that the -50 V rating and -100 mA current capability align with the load requirements. Consider the thermal resistance characteristics if operating near maximum power dissipation limits.
The PUMB11-QF belongs to Nexperia's PUM series of resistor-equipped double transistors. It serves as the PNP/PNP complement to the PUMD3-Q (NPN/PNP) and pairs with the PUMH11-Q (NPN/NPN). These devices are designed to replace multiple discrete components in compact digital logic and interface circuits.
Direct functional equivalents include the PUMD3-Q for NPN/PNP configurations and the PUMH11-Q for NPN/NPN configurations. Verify pin compatibility and electrical parameters before substituting with other RET families.
Both bias resistors, R1 and R2, have a nominal value of 10 kΩ.
Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The maximum total power dissipation for the entire device is 300 mW at an ambient temperature of 25 °C.