PUMB11-QX

PUMB11-QX

$0.03
  • Description:PUMB11-Q/SOT363/SC-88
  • Series:-

SKU:3251b4dfd093 Category: Brand:

  
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Product Detailed Parameters

  • Description:PUMB11-Q/SOT363/SC-88
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:180MHz
  • Power - Max:200mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMB11-QX

Overview

The PUMB11-QX is a PNP/PNP Resistor-Equipped Transistor (RET) in a SOT363-3 package. It features two integrated PNP transistors with built-in bias resistors, R1 = 10 kΩ and R2 = 10 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -100 mA per transistor, and a total power dissipation (Ptot) of 300 mW for the device at 25 °C. The transition frequency (fT) is typically 180 MHz. The component is qualified to AEC-Q101 standards.

Feature Summary

  • Integrates dual PNP transistors with fixed internal bias resistors to reduce external component count.
  • Qualified according to AEC-Q101 automotive standards for reliability in critical applications.
  • Utilizes a compact SOT363-3 surface-mounted package to minimize PCB footprint.

Applications

  • Low current peripheral drivers
  • Control of IC inputs
  • Replacing general-purpose transistors in digital applications

Procurement Notes

Verify the specific suffix 'QX' against the official Nexperia ordering information table to confirm packaging details such as reel or cut tape specifications. Ensure the procurement documentation references the correct data sheet version dated 22 July 2026 to align with the SOT363-3 package revision.

Selection Notes

Select this component when a dual PNP configuration with 10 kΩ input biasing is required within a minimal footprint. Verify that the -50 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Confirm thermal management requirements against the 300 mW total power dissipation limit at ambient temperatures up to 25 °C.

Part Context

The PUMB11-Q series belongs to Nexperia's family of resistor-equipped double transistors designed for space-constrained designs. The PNP/PNP variant complements the NPN/NPN (PUMH11-Q) and NPN/PNP (PUMD3-Q) options, providing standardized biasing solutions for differential or complementary switching circuits in portable and automotive electronics.

Replacement Considerations

Direct functional equivalents include the PUMH11-Q for NPN/NPN configurations and the PUMD3-Q for NPN/PNP combinations. For single-transistor replacements, verify if discrete components can replicate the integrated bias network without altering the board layout significantly.

FAQ

What are the typical values for the built-in bias resistors?

The typical value for both R1 (input bias resistor) and R2 is 10 kΩ.

Is the PUMB11-Q suitable for automotive applications?

Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the maximum total power dissipation for the device?

The maximum total power dissipation (Ptot) is 300 mW when the device is mounted on an FR4 PCB at an ambient temperature of 25 °C.

PUMB11-QXPUMB11-QX
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