PUMB11/ZLX

PUMB11/ZLX

  • Description:TRANS PREBIAS
  • Series:-

SKU:295b11f18859 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:180MHz
  • Power - Max:300mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMB11/ZLX

Overview

The PUMB11/ZLX is a PNP/PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates two PNP transistors with built-in bias resistors in a TSSOP6 (SOT363-3) surface-mount package. Key electrical parameters include a collector-emitter voltage of -50 V, an output current of -100 mA per transistor, and a total power dissipation of 300 mW at 25 °C. The internal bias resistors are specified as R1 = 10 kΩ and R2 = 10 kΩ. The device features a DC current gain (hFE) of 30 at -5 mA and -5 V, with a collector-emitter saturation voltage of -100 mV at -10 mA.

Feature Summary

  • Integrates dual PNP transistors with built-in bias resistors to simplify circuit design
  • Reduces component count and pick-and-place costs through compact SMD packaging
  • Provides high breakdown voltage capability for digital switching applications

Applications

  • Low current peripheral drivers
  • Control of IC inputs
  • Replacing general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix /ZLX against official Nexperia documentation to confirm tape and reel specifications or marking codes. Ensure compatibility with standard reflow soldering profiles for the SOT363-3 package. Confirm RoHS compliance status for the specific batch prior to integration into production designs.

Selection Notes

Select this component when space-constrained designs require dual PNP switching with integrated base drive. The 10 kΩ bias resistor values suit logic-level interface requirements. Verify thermal derating curves if operating near the 150 °C junction temperature limit or in high ambient conditions.

Part Context

The PUMB11 belongs to Nexperia's family of double Resistor-Equipped Transistors (RETs). It serves as the PNP/PNP complement to the NPN/NPN PUMH11 and the NPN/PNP PUMD3. All variants share the same SOT363-3 footprint, facilitating pin-compatible design flexibility within mixed-signal circuits.

Replacement Considerations

Direct functional substitutes include the PUMH11 for NPN/NPN configurations and PUMD3 for NPN/PNP combinations within the same package family. Verify resistor values and polarity before substitution.

FAQ

What are the specific values of the built-in bias resistors?

The PUMB11 features a bias resistor R1 (input) of 10 kΩ and a bias resistor ratio R2/R1 of 1, resulting in R2 being approximately 10 kΩ.

What is the maximum total power dissipation for the device?

The maximum total power dissipation is 300 mW when the ambient temperature is 25 °C.

Does the PUMB11 have automotive qualification?

No, unless explicitly stated otherwise in specific product data sheets, this product is not qualified for automotive use according to AEC-Q101 standards.

PUMB11/ZLXPUMB11/ZLX

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