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The PUMB13-Q is a PNP/PNP double Resistor-Equipped Transistor (RET) housed in a SOT363-3 (TSSOP6) surface-mounted plastic package. It integrates two PNP transistors with built-in bias resistors, where R1 is nominally 4.7 kΩ and the R2/R1 ratio is 10. The device supports a collector-emitter voltage of -50 V and an output current of -100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature. It features AEC-Q101 qualification for automotive use.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and marking codes. Confirm that the SOT363-3 package variant matches the design footprint requirements. Check the latest datasheet revision for any updates to thermal characteristics or limiting values before finalizing procurement specifications.
Select this component when space-constrained designs require dual PNP switching with integrated base resistors. Ensure the application voltage does not exceed the -50 V collector-emitter rating. Verify that the required input current aligns with the 4.7 kΩ bias resistor value to achieve proper saturation or cutoff states within the specified temperature range.
The PUMB13-Q serves as the PNP/PNP complement to the PUMD13-Q (NPN/PNP) and PUMH13-Q (NPN/NPN) devices. All three variants share the same SOT363-3 package and pinout configuration, allowing for flexible design choices based on required transistor polarity while maintaining consistent board layout dimensions.
Direct functional equivalents include the PUMD13-Q for NPN/PNP configurations and the PUMH13-Q for NPN/NPN setups. These parts share identical mechanical footprints and pin assignments, facilitating drop-in replacements if the circuit topology permits polarity inversion.
The bias resistor R1 is nominally 4.7 kΩ, and the ratio of R2 to R1 is 10, resulting in an R2 value of approximately 47 kΩ.
Yes, the PUMB13-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The total power dissipation for the entire device is 300 mW when the ambient temperature is 25 °C.