PUMB13/ZLX

Overview

The PUMB13 is a PNP/PNP double Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88) surface-mounted plastic package. It integrates two independent PNP transistors with built-in bias resistors, specifically R1 = 4.7 kΩ and R2 = 47 kΩ per transistor. The device supports a maximum collector-emitter voltage of -50 V and an output current capability of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of at least 100 at -10 mA and a transition frequency of 180 MHz. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature.

Feature Summary

• Integrates dual PNP transistors with fixed internal bias resistors to simplify circuit design.
• Reduces component count and pick-and-place costs by replacing multiple discrete devices.
• Provides high breakdown voltage and 100 mA output current capability within a compact footprint.

Applications

• Low current peripheral driver
• Control of IC inputs
• Replaces general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure that the selected variant matches the required SOT363-3 package specification. Cross-reference the marking code 'B%' with production data sheets to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select the PUMB13 when a dual PNP configuration with integrated biasing is required for space-constrained designs. Verify that the 4.7 kΩ input resistor and 47 kΩ feedback resistor values align with the target logic levels and drive requirements. Confirm that the -50 V voltage rating and 100 mA current limits are sufficient for the intended load conditions.

Part Context

The PUMB13 belongs to Nexperia's family of PNP/PNP Resistor-Equipped Double Transistors. It serves as the PNP counterpart to the NPN/NPN PUMH13 and the complementary NPN/PNP PUMD13. All variants share the same SOT363-3 package and functional architecture but differ in transistor polarity and internal resistor configurations.

Replacement Considerations

Direct replacements include the PUMH13 for NPN/NPN applications and the PUMD13 for mixed NPN/PNP configurations. Verify pin compatibility and resistor ratios when substituting these components to ensure circuit functionality remains unchanged.

FAQ

What are the specific values of the built-in bias resistors?

The PUMB13 features a bias resistor R1 of 4.7 kΩ and a bias resistor ratio R2/R1 of 10, resulting in an R2 value of approximately 47 kΩ per transistor.

What is the maximum total power dissipation for the device?

The total power dissipation for the entire device is 300 mW at an ambient temperature of 25 °C, while each individual transistor is limited to 200 mW under the same conditions.

How does the PUMB13 compare to discrete transistors in terms of PCB area?

The PUMB13 replaces two separate general-purpose transistors and their associated biasing components within a single SOT363-3 package, significantly reducing the required printed-circuit board area.