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The PUMB15,115 is a dual PNP resistor-equipped transistor (RET) in a SOT363 (SC-88) surface-mount package. It features built-in bias resistors R1 and R2, both nominally 4.7 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -100 mA per transistor. Total power dissipation is rated at 300 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain (hFE) of at least 30 at -10 mA and -5 V, and a collector-emitter saturation voltage of no more than -150 mV under specified conditions.
Verify the specific ordering suffix matches the required packing method, such as tape and reel configurations. Confirm that the component status remains active for new designs by consulting the latest manufacturer documentation. Ensure compliance with RoHS directives and check for any recent product change notices affecting assembly or labeling before finalizing procurement orders.
Select this component when space constraints require a compact SOT363 package with integrated biasing. Verify that the required base resistance aligns with the fixed 4.7 kΩ internal values. Ensure the application operates within the -50 V collector-emitter voltage limit and does not exceed the 100 mA continuous current rating per transistor channel.
The PUMB15 belongs to the PUMB series of PNP/PNP resistor-equipped transistors manufactured by Nexperia. It shares functional similarities with the PEMB15 but utilizes the smaller SOT363 package instead of the SOT666. This family is designed to replace discrete transistor and resistor networks in digital switching applications.
PEMB15 offers identical electrical specifications but uses the SOT666 package. PUMD15 and PUMH15 are complementary NPN/NPN variants within the same product family. Substitution requires verifying package footprint compatibility and ensuring the opposite polarity meets the circuit requirements.