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The Nexperia PUMB16,115 is a dual pre-biased NPN transistor array housed in a SOT363 (SC-88) surface-mount package. It integrates two independent PNP transistors with built-in bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage of -50 V and a continuous output current of -100 mA per transistor. Internal resistor values are specified as R1 = 22 kΩ and R2 = 47 kΩ, yielding a typical ratio of 2.1. Total power dissipation is rated at 300 mW for the device at 25 °C ambient temperature.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging orientation and manufacturing origin. Confirm RoHS compliance status and product lifecycle stage prior to procurement. Ensure the selected distributor provides traceable source data matching the original manufacturer specifications.
Select this component when space-constrained designs require dual PNP switching with integrated base drive. Verify that the internal resistor values align with the target logic levels. Check thermal constraints against the total power dissipation rating of 300 mW in the SOT363 package.
This part belongs to the PEMB16/PUMB16 family of resistor-equipped transistors. It serves as the PNP variant within a series that includes complementary NPN versions like PEMD16 and PEMH16. The SOT363 package is standardized across these devices for consistent footprint compatibility.
Direct functional substitutes include PEMD16,115 and PEMH16,115 for NPN configurations. For identical PNP characteristics in different packages, consider PEMB16 variants.