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The PUMB30,115 is a dual PNP Resistor-Equipped Transistor (RET) housed in a SOT363 (SC-88) surface-mount package. It integrates two PNP transistors with built-in bias resistors, where R1 is 2.2 kΩ and R2 is open. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -100 mA per transistor, and a total power dissipation of 300 mW at 25 °C ambient temperature. The device features a DC current gain (hFE) of 30 at IC = -20 mA and VCE = -5 V.
Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin and tape-and-reel specifications. Ensure compatibility with standard reflow soldering processes as recommended by the manufacturer. Confirm that the SOT363 footprint matches the target PCB layout requirements before finalizing procurement decisions.
Select this component when space constraints require replacing multiple discrete components with a single dual RET package. It serves as a direct replacement for BC857BS and BC857BV types in applications requiring 50 V blocking voltage and 100 mA current handling. Verify thermal resistance limits if operating near maximum ambient temperatures.
The PUMB30 belongs to the PEMB30/PUMB30 family of PNP/PNP double resistor-equipped transistors. It is functionally equivalent to PEMD30 and PEMH30 variants but utilizes the SOT363 package instead of SOT666. This series is designed for portable equipment and general-purpose switching applications where board space optimization is critical.
BC857BS and BC857BV are documented cost-saving alternatives or functional equivalents for this component type.