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The PUMB9/ZLH is a dual pre-biased NPN transistor array manufactured by Nexperia USA Inc. It integrates two NPN bipolar junction transistors with built-in biasing resistors in a compact 6-TSSOP (SC-88/SOT-363) surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistor values are specified as R1 = 10 kΩ and R2 = 47 kΩ. Key electrical characteristics include a transition frequency of 180MHz, a DC current gain (hFE) minimum of 100 at 5mA/5V, and a power dissipation rating of 300mW. It holds AEC-Q100 automotive qualification.
Verify the specific suffix ZLH against official Nexperia documentation to confirm tape-and-reel specifications and lot traceability. Ensure compatibility with standard SMT assembly processes for 6-TSSOP packages. Cross-reference datasheet revisions to confirm parameter stability before finalizing procurement orders.
Select this component when a dual NPN configuration with fixed biasing is required in a minimal footprint. Compare internal resistance values (10kΩ/47kΩ) against circuit drive requirements. Consider the 180MHz transition frequency for high-speed switching applications within the 50V voltage limit.
This part belongs to the PUMB series of pre-biased double transistors from Nexperia. It serves as the NPN counterpart to the PNP PUMB9 variant. The series is designed to replace discrete resistor-transistor networks, offering improved consistency and reduced layout complexity in modern electronic designs.
Direct functional substitutes include the PUMH9 (NPN/NPN) and PUMD9 (NPN/PNP) variants from the same family. Verify pinout compatibility and internal resistance tolerances when substituting with other manufacturers' pre-biased arrays.