PUMD10-QF

Overview

The PUMD10-QF is a dual Resistor-Equipped Transistor (RET) containing an NPN and a PNP transistor in a SOT363-3 package. It features built-in bias resistors with R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is 300 mW at 25 °C ambient temperature. The junction temperature range is -65 °C to +150 °C, and it is qualified according to AEC-Q101 for automotive applications.

Feature Summary

• Built-in bias resistors simplify circuit design and reduce component count
• AEC-Q101 qualified for automotive reliability
• Ultra-small SOT363-3 surface-mounted package

Applications

• Low current peripheral driver
• Control of IC inputs
• Digital applications replacing general-purpose transistors

Procurement Notes

Verify the specific ordering suffix 'QF' against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the required automotive qualification standards and package version before finalizing procurement orders.

Selection Notes

Select this RET when space constraints require a compact SOT363-3 package. Verify that the internal resistor values of 2.2 kΩ and 47 kΩ align with the target logic levels. Confirm compatibility with the required operating temperature range and total power dissipation limits for the intended application environment.

Part Context

This part belongs to the Nexperia PUMD10-Q family of NPN/PNP double Resistor-Equipped Transistors. It serves as a complement to other configurations like the PUMB10-Q (PNP/PNP) and PUMH10-Q (NPN/NPN). The product utilizes the TSSOP6 plastic surface-mounted package variant.

Replacement Considerations

Direct functional substitutes within the same series include PUMB10-Q and PUMH10-Q. Verify pinout compatibility and resistor values when considering these alternatives for existing designs.