PUMD10/ZLH

PUMD10/ZLH

  • Description:TRANS PREBIAS
  • Series:-

SKU:bd60bb86ed83 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:230MHz, 180MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMD10/ZLH

Overview

The Nexperia PUMD10 is a dual Resistor-Equipped Transistor (RET) containing one NPN and one PNP bipolar junction transistor in a SOT363-3 package. It features built-in bias resistors with R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is rated at 200 mW per transistor and 300 mW for the device, with a junction temperature limit of 150 °C. Transition frequencies are specified at 230 MHz for the NPN section and 180 MHz for the PNP section.

Feature Summary

  • Integrates NPN and PNP transistors with fixed internal bias resistors to reduce component count
  • Provides simplified circuit design through pre-biased configuration
  • Offers low profile surface-mount packaging for automated assembly

Applications

  • Low current peripheral driver circuits
  • Control of IC inputs
  • Replacement of general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package version and marking codes. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the selected variant matches the required thermal characteristics for the intended operating environment.

Selection Notes

Select this component when space-constrained designs require integrated biasing for both NPN and PNP switching functions. Evaluate the total power dissipation limits relative to ambient temperature conditions. Consider the transition frequency specifications if high-speed signal switching is required for the application.

Part Context

The PUMD10 belongs to the PUMD series of resistor-equipped double transistors manufactured by Nexperia. It serves as the NPN/PNP complement to the PUMB10 (PNP/PNP) and PUMH10 (NPN/NPN) variants within the same product family. All devices share similar electrical characteristics and utilize the SOT363-3 plastic surface-mounted package.

Replacement Considerations

MUN5335DW1T1G from onsemi is listed as a direct substitute.

PUMD10/ZLHPUMD10/ZLH

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