PUMD10,135

PUMD10,135

$0.22
  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-

SKU:eda7affb3410 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMD10,135

Overview

The PUMD10,135 is a dual Resistor-Equipped Transistor (RET) containing one NPN and one PNP transistor in a SOT363-3 package. It features built-in bias resistors with R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is limited to 200 mW per transistor and 300 mW per device at 25 °C ambient temperature. Transition frequencies are 230 MHz for the NPN section and 180 MHz for the PNP section.

Feature Summary

  • Integrates NPN and PNP transistors with built-in bias resistors to simplify circuit design
  • Reduces component count and pick-and-place costs compared to discrete solutions
  • Provides high output current capability within an ultra-small surface-mounted package

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the SOT363-3 package variant aligns with the target PCB footprint requirements. Ensure environmental compliance standards meet project specifications. Cross-reference the manufacturer's latest documentation for any recent changes to marking codes or assembly details.

Selection Notes

Select this component when space constraints require a compact dual-transistor solution with integrated biasing. The 50 V rating and 100 mA current capacity suit low-power switching tasks. Consider the thermal resistance characteristics if operating near maximum power limits. Verify compatibility with existing digital logic levels using the provided input voltage specifications.

Part Context

The PUMD10 belongs to Nexperia's family of resistor-equipped double transistors designed for digital applications. It serves as a compact alternative to discrete NPN/PNP pairs. Complementary variants include the PUMB10 for PNP/PNP configurations and the PUMH10 for NPN/NPN setups. The device utilizes the SOT363-3 package to minimize board area while maintaining electrical performance.

Replacement Considerations

Publicly confirmed substitute part numbers include MUN5335DW1T1G from onsemi and DCX123JU-7-F from Diodes Incorporated.

PUMD10,135PUMD10,135
$0.22
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