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The Nexperia PUMD12/DG/B4X is a dual Resistor-Equipped Transistor (RET) featuring an NPN and a PNP transistor within a single SOT363 (SC-88) surface-mount package. It provides a maximum collector-emitter voltage of 50 V and supports an output current of 100 mA per transistor. The device integrates bias resistors R1 and R2, both with a typical value of 47 kΩ. Total power dissipation is rated at 200 mW per transistor and 300 mW for the entire device at 25 °C ambient temperature. The component operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and manufacturing site details. Confirm RoHS compliance status and ensure the component meets the required automotive qualification standards before finalizing procurement specifications.
Select this component when space constraints require a dual-transistor solution with integrated base resistors. Ensure the 50 V collector-emitter voltage rating and 100 mA current capability align with the target circuit requirements. Verify that the SOT363 package dimensions fit the available PCB footprint.
This part belongs to the PEMD12/PUMD12 family of NPN/PNP resistor-equipped transistors. The PUMD12 variant specifically utilizes the SOT363 (SC-88) package, offering a very small form factor compared to standard discrete transistor packages while maintaining identical electrical characteristics.
Publicly confirmed substitute part numbers are not provided in the source material. Designers should consult the manufacturer's official documentation or authorized distributors for verified cross-reference data.