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Product Detailed Parameters
- Description：PUMD12-Q/SOT363/SC-88
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230MHz, 180MHz
- Power - Max：200mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
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Overview
The Nexperia PUMD12-QX is an NPN/PNP Resistor-Equipped Double Transistor (RET) housed in a SOT363-3 (TSSOP6) surface-mounted package. It integrates two transistors with built-in bias resistors, where R1 is nominally 47 kΩ and the R2/R1 ratio is unity. The device supports a maximum collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is rated at 300 mW at 25 °C ambient temperature. The component is qualified according to AEC-Q101 standards for automotive applications.
Feature Summary
- Integrates NPN and PNP transistors with fixed internal bias resistors to reduce external component count.
- AEC-Q101 qualified for reliability in automotive environments.
- Compact SOT363-3 package design minimizes PCB footprint and pick-and-place costs.
Applications
- Low current peripheral driver circuits
- Control of IC inputs
- Replacement of general purpose transistors in digital applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure the requested part number matches the exact revision level required for the target application. Cross-reference the marking code D%1 with manufacturing site codes to validate authenticity and traceability during the procurement process.
Selection Notes
Select this component when space constraints require a dual-transistor solution with integrated biasing. The 50 V rating and 100 mA current capability suit low-power switching tasks. Verify that the 47 kΩ input resistance aligns with the driving source requirements. Consider the thermal derating characteristics if operating in high ambient temperatures or enclosed spaces.
Part Context
The PUMD12-Q belongs to Nexperia's family of resistor-equipped double transistors. It serves as the complement to the PUMH2 (NPN/NPN) and PUMB2 (PNP/PNP) variants. This series simplifies digital logic interface designs by combining active switching elements with necessary base biasing networks in a single compact package.
Replacement Considerations
Direct functional substitutes include the PUMD12 without the automotive qualification suffix, or other RETs from the same family like the PUMH2 or PUMB2 if the transistor polarity combination differs. Verify pin compatibility and electrical limits before substitution.
FAQ
What are the nominal values for the built-in bias resistors?
The input bias resistor R1 is nominally 47 kΩ, and the ratio of R2 to R1 is 1.
Is this component suitable for automotive applications?
Yes, the PUMD12-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum total power dissipation for the device?
The total power dissipation is 300 mW when the ambient temperature is 25 °C.
