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The PUMD13/1F is a dual Resistor-Equipped Transistor (RET) containing one NPN and one PNP transistor in a SOT-363 surface-mount package. It features built-in bias resistors with R1 at 4.7 kΩ and R2 at 47 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is rated at 200 mW at 25°C ambient temperature. Transition frequencies are specified at 230 MHz for the NPN section and 180 MHz for the PNP section. The component is qualified to AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix matches the required tape and reel configuration, such as T1 or T2 reverse taping options available for the SOT-363 package. Confirm that the marking code corresponds to the manufacturing site code indicated by the placeholder in the official documentation. Ensure compliance with RoHS and REACH regulations as stated in the chemical content data before finalizing procurement orders.
Select this component when space constraints require combining two discrete transistors with their associated base biasing resistors into a single footprint. The fixed resistor values of 4.7 kΩ and 47 kΩ suit standard logic interface applications. Verify that the 50 V breakdown voltage and 100 mA current limits align with the target circuit requirements.
This part belongs to the PUMD13 family of NPN/PNP double Resistor-Equipped Transistors. It shares functional characteristics with the PEMD13 variant but utilizes the SOT-363 (SC-88) package instead of the SOT-666 ultra-small flat lead package. Both variants offer identical electrical specifications for the integrated transistor pairs.
Publicly confirmed substitutes include NHUMD13, which offers similar functionality with different resistor values. Other compatible RET devices within the same Nexperia portfolio may serve as alternatives if pin compatibility and electrical ratings are verified against the original design specifications.