PUMD13-QF

PUMD13-QF

$0.03
  • Description:PUMD13-Q/SOT363/SC-88
  • Series:-

SKU:547dd85da93d Category: Brand:

  
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Product Detailed Parameters

  • Description:PUMD13-Q/SOT363/SC-88
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:230MHz, 180MHz
  • Power - Max:200mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMD13-QF

Overview

The Nexperia PUMD13-Q is an NPN/PNP Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88) surface-mount package. It integrates one NPN and one PNP transistor with built-in bias resistors, specifically R1 at 4.7 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is rated at 200 mW per transistor and 300 mW for the entire device at 25 °C ambient temperature. Transition frequencies reach 230 MHz for the NPN section and 180 MHz for the PNP section.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • Integrated bias resistors reduce component count and simplify circuit design
  • Compact SOT363-3 package minimizes board space and pick-and-place costs

Applications

  • Low current peripheral driver circuits
  • Control of IC inputs
  • Replacement for general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration, as standard quantities vary by manufacturer designation. Confirm that the AEC-Q101 qualification aligns with target automotive application requirements before finalizing procurement plans.

Selection Notes

Select this component when space constraints require integrated biasing solutions. Ensure the 50 V breakdown voltage and 100 mA current limits accommodate the specific load requirements. Verify thermal management capabilities against the 200 mW per-transistor dissipation rating under expected operating conditions.

Part Context

This part belongs to the PUMD13 family of resistor-equipped double transistors. It shares functional similarities with other RETs like the NHUMD13 but differs in voltage ratings and specific resistor values. The Q-suffix indicates automotive-grade qualification distinct from standard commercial variants.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Nexperia resources for validated cross-references.

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