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The Nexperia PUMD13 is a 50 V, 100 mA NPN/PNP resistor-equipped double transistor (RET) housed in a SOT363-3 (SC-88) surface-mounted package. It integrates an NPN and a PNP transistor with built-in bias resistors: R1 = 4.7 kΩ and R2 = 47 kΩ. The device features a collector-emitter voltage of 50 V, output current capability of 100 mA, and total power dissipation of 200 mW per transistor. Transition frequencies are 230 MHz for the NPN section and 180 MHz for the PNP section.
Verify the specific ordering suffix against the manufacturer's official database to confirm packaging details and manufacturing site codes. Ensure the selected variant matches the required SOT363-3 package version. Cross-reference the marking code '3' followed by the site code on the physical component to validate authenticity and traceability before integration into production.
Select this RET when space-saving and simplified biasing are required for low-current switching tasks. Compare the integrated 4.7 kΩ input resistance against discrete resistor solutions to evaluate board area reduction. Verify that the 50 V collector-emitter rating meets the maximum operating voltage of the target application circuit without exceeding absolute maximum ratings.
The PUMD13 belongs to the PUMD series of NPN/PNP resistor-equipped double transistors. Complementary configurations include the PUMB13 (PNP/PNP) and PUMH13 (NPN/NPN). These devices are designed to replace multiple discrete components, offering a compact solution for digital logic interfacing and signal switching within small form-factor electronic designs.
Direct functional equivalents include the PUMB13 for PNP/PNP configurations and PUMH13 for NPN/NPN setups. For higher voltage requirements, consider the NHUMD13 family rated at 80 V. Verify pin compatibility and thermal characteristics when substituting with other SOT363-based RETs from different manufacturers.