SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia PUMD13 is a dual Resistor-Equipped Transistor (RET) containing one NPN and one PNP transistor within a SOT363-3 (SC-88) surface-mounted package. It features built-in bias resistors with R1 at 4.7 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation is rated at 300 mW, with a junction temperature limit of 150 °C. Transition frequencies are specified at 230 MHz for the NPN section and 180 MHz for the PNP section.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel quantities or cut tape availability. Confirm that the requested variant matches the standard production data sheet specifications before finalizing procurement orders.
Select this component when space constraints require a dual transistor configuration with integrated biasing. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the required switching speed aligns with the specified transition frequencies for both NPN and PNP sections.
This part belongs to the PUMD series of resistor-equipped double transistors. Complementary configurations include the PUMB13 for PNP/PNP pairs and the PUMH13 for NPN/NPN pairs. All variants share the same SOT363-3 package footprint and similar electrical characteristics tailored to their specific transistor polarities.
Direct functional replacements include the PUMD13/1F from Nexperia, which shares identical electrical parameters and pinout configuration within the SOT-363 package.