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The Nexperia PUMD15-QX is a dual Resistor-Equipped Transistor (RET) featuring an NPN and a PNP transistor within a SOT363-3 (SC-88) TSSOP6 package. It provides a collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA per transistor. The device includes built-in bias resistors, with R1 specified at 4.7 kΩ and R2/R1 ratio at 1. Total power dissipation is rated at 300 mW. Operating temperatures range from -65 °C to +150 °C. The component is qualified according to AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the procurement channel sources directly from authorized distributors to guarantee product authenticity and traceability. Confirm that the delivered components match the exact part number and revision level required for the intended application.
Select this component when space constraints require combining two transistors and biasing resistors into a single footprint. The integrated resistor values eliminate external biasing requirements, reducing board area. Verify that the 50 V rating and 100 mA current limits meet the specific load requirements of the target circuit design before finalizing the selection.
The PUMD15-Q belongs to Nexperia's family of Resistor-Equipped Transistors designed to replace multiple discrete components. The 'Q' suffix indicates qualification for automotive applications under AEC-Q101 standards. This specific variant combines an NPN and PNP transistor, offering complementary switching capabilities in a minimal surface-mount package.
Direct functional equivalents include the PUMH15-Q (NPN/NPN) and PUMB15-Q (PNP/PNP). When replacing, verify pin compatibility and ensure the replacement part meets the same thermal and electrical ratings. Check for any changes in marking codes or package revisions between versions.