PUMD15,135

Overview

The PUMD15,135 is a 50 V, 100 mA NPN/PNP Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88) TSSOP6 surface-mounted package. It integrates an NPN transistor (TR1) and a PNP transistor (TR2), each with built-in bias resistors R1 and R2 nominally set to 4.7 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of at least 30 for the NPN section and transition frequencies up to 230 MHz for TR1 and 180 MHz for TR2. Total power dissipation is rated at 300 mW per device at 25 °C ambient temperature.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors to simplify circuit design.
• Reduces component count and pick-and-place costs by combining two transistors and four resistors into one package.
• Qualified under AEC-Q101 standards for automotive reliability requirements.

Applications

• Low current peripheral driver
• Controlling IC inputs
• Replacement of general purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration for automated assembly. Confirm that the SOT363-3 package variant aligns with the PCB footprint design. Ensure the selected part number corresponds to the latest product data sheet revision to guarantee accurate thermal and electrical specifications during final validation.

Selection Notes

Select this component when space constraints require a compact dual-transistor solution with integrated biasing. The NPN/PNP complement offers flexibility for push-pull or differential configurations. Verify that the 50 V breakdown voltage and 100 mA current limits meet the application's peak stress requirements without exceeding absolute maximum ratings.

Part Context

The PUMD15 belongs to Nexperia's family of resistor-equipped double transistors. It serves as the NPN/PNP variant within this series, complemented by the PUMH15 (NPN/NPN) and PUMB15 (PNP/PNP) models. All variants share similar packaging and functional benefits but differ in internal transistor polarity combinations to suit specific logic interface needs.

Replacement Considerations

Direct functional substitutes include the PUMH15 for NPN/NPN configurations and the PUMB15 for PNP/PNP setups. Cross-referencing pinouts is essential as polarity differences affect circuit connectivity. Ensure any replacement maintains the same SOT363-3 package dimensions and thermal resistance characteristics.

FAQ

What are the nominal values for the built-in bias resistors?

Both R1 (input bias) and R2 (collector-base bias) have a nominal value of 4.7 kΩ, with a specified tolerance range allowing R1 to vary between 3.3 kΩ and 6.1 kΩ.

How does the device handle thermal dissipation?

The total power dissipation is limited to 300 mW per device at an ambient temperature of 25 °C. The thermal resistance from junction to ambient is 417 K/W in free air, requiring derating at higher temperatures.

Is this component suitable for automotive applications?

Yes, the PUMD15 is AEC-Q101 qualified, indicating it meets the reliability standards required for automotive electronic equipment.