SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia PUMD16-QX is a dual Resistor-Equipped Transistor (RET) featuring an NPN and a PNP transistor within a single SOT363-3 (SC-88) surface-mounted package. It provides a collector-emitter voltage of 50 V and supports an output current of 100 mA per transistor. The device integrates bias resistors with nominal values of R1 = 22 kΩ and R2 = 47 kΩ, resulting in a ratio of 2.1. Qualified under AEC-Q101 for automotive use, it operates across a temperature range of -65 °C to +150 °C with a total power dissipation of 300 mW.
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the requested variant matches the required package type and marking code. Ensure compatibility with the target application's thermal and electrical requirements based on the published data sheet specifications.
Select this component when space constraints require combining two discrete transistors into one footprint. Verify that the integrated resistor values meet the specific biasing requirements of the control logic. Consider the 300 mW total power dissipation limit when designing for high ambient temperatures or dense PCB layouts.
This part belongs to Nexperia's portfolio of Resistor-Equipped Transistors designed to reduce bill-of-materials complexity. It serves as a compact alternative to using separate discrete transistors and external resistors. The PUMD16-Q complements other RET families like the PUMH and PUMB series by offering mixed NPN/PNP configurations.
Direct functional equivalents include the PUMH16-Q (NPN/NPN configuration) and the PUMB16-Q (PNP/PNP configuration). Designers replacing discrete components should verify that the internal resistor tolerances and transistor characteristics align with the original circuit design parameters.