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Product Detailed Parameters
- Description：TRANS PREBIAS 1NPN 1PNP 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：22kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：300mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
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Overview
The Nexperia PUMD19,115 is a dual NPN/PNP resistor-equipped transistor housed in a SOT363 (SC-88) plastic surface-mount package. It integrates an NPN transistor with a built-in 22 kΩ input bias resistor and a standalone PNP transistor. Key electrical parameters include a collector-emitter voltage of 50 V for both devices, a maximum DC output current of 100 mA, and a minimum DC current gain (hFE) of 100 at IC = 1 mA. The device supports a total power dissipation of 300 mW per device and operates within an ambient temperature range of -65°C to +150°C.
Feature Summary
- Integrates an NPN transistor with a built-in bias resistor and a separate PNP transistor in a single compact package.
- Simplifies circuit design by reducing the external component count required for biasing.
- Reduces pick and place manufacturing costs through consolidated packaging.
Applications
- Low current peripheral driver
- Control of IC inputs
- Replacement of general-purpose transistors in digital applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the packing method, as variations exist between standard taping and reverse taping configurations. Ensure compatibility with the intended PCB footprint and reflow soldering profiles specified in the thermal characteristics section.
Selection Notes
Select this component when space constraints require combining a biased switching element with an additional unbuffered transistor. The integrated 22 kΩ resistor on the NPN side simplifies base drive circuits, while the independent PNP provides flexibility for complementary logic or level shifting tasks without requiring separate discrete components.
Part Context
This part belongs to the PUMD series of resistor-equipped transistors designed for high-density surface-mount applications. It serves as a functional replacement for multiple discrete components, specifically targeting designs where board real estate and assembly complexity are critical factors in portable and consumer electronics.
Replacement Considerations
PEMD19
FAQ
What is the configuration of the internal resistors?
The NPN transistor includes a built-in 22 kΩ bias resistor at its input. The PNP transistor does not have an internal resistor; its base connection is open.
What is the maximum collector-emitter voltage rating?
Both the NPN and PNP transistors have a maximum collector-emitter voltage (VCEO) rating of 50 V.
What is the minimum DC current gain specified?
The minimum DC current gain (hFE) is specified as 100, measured at a collector current of 1 mA and a collector-emitter voltage of 5 V.
