SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PUMD2-QX is a dual bipolar junction transistor (BJT) configured as NPN and PNP units within a single SOT363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V for both polarities and a collector-base voltage (VCBO) of 50 V. The device supports a continuous collector current of 100 mA with a low saturation voltage of 150 mV. Power dissipation is rated at 200 mW, operating reliably between -65 °C and +150 °C. With a minimum DC current gain (hFE) of 80, it provides efficient switching performance in compact automotive-grade designs.
Verify the specific suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference the ordering code with authorized distributors to confirm availability and authenticity before finalizing procurement plans.
Select this component when space-constrained designs require two complementary transistors in a single footprint. The 50 V rating suits standard 12 V automotive systems. Verify that the 100 mA current limit and 200 mW thermal dissipation meet the load requirements. Consider the SOT363 package dimensions for PCB layout constraints.
This device belongs to Nexperia's portfolio of automotive-grade discrete semiconductors designed for robust operation in harsh environments. The PUMD series offers integrated solutions for logic control and signal switching, reducing bill-of-materials count compared to using separate discrete transistors.
Check for direct equivalents such as the PUMD24-QX or other dual BJT variants in the SOT363 package. Verify that replacement parts maintain identical pin configurations, voltage ratings, and thermal characteristics to ensure seamless integration without redesigning the host circuit board.