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The PUMD2/ZLH is a dual pre-biased transistor array manufactured by Nexperia USA Inc., housed in a 6-TSSOP surface-mount package. It integrates one NPN and one PNP bipolar junction transistor (BJT) with built-in biasing resistors. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA, with a total power dissipation rating of 300mW. Each transistor includes internal base and emitter resistors valued at 22 kΩ. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 5mA and 5V, a maximum saturation voltage of 150mV at specified currents, and a collector cutoff current of 1µA.
Verify the specific suffix ZLH against official Nexperia documentation to confirm tape-and-reel specifications or marking codes. Ensure compatibility with standard 6-TSSOP footprints during procurement planning. Cross-reference the manufacturer part number with authorized distributors to confirm availability status and lead times.
Select this component when a complementary NPN/PNP pair with integrated 22 kΩ biasing resistors is required. Verify that the 50V voltage rating and 100mA current capacity meet the application's operational limits. Confirm that the 300mW power dissipation capability is sufficient for the intended thermal environment.
The PUMD2 series belongs to Nexperia's portfolio of Resistor-Equipped Transistors (RETs). These devices combine discrete transistors with precision resistors in single packages. The PUMD2 variant specifically offers a complementary NPN/PNP configuration, serving as a compact alternative to discrete component solutions in signal processing and switching applications.
Official complementary counterparts within the same family include the PUMH24 (NPN/NPN) and PUMB24 (PNP/PNP). Verify pinout compatibility and electrical parameter equivalence before substituting with other manufacturers' dual pre-biased transistor arrays.