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The PUMD24-QX is a dual bipolar junction transistor (BJT) configured as NPN/PNP, housed in an SOT363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device operates within a temperature range of -65°C to +150°C, with a power dissipation rating of 200 mW. It includes integrated base resistors, offering a minimum DC current gain (hfe) of 80. Qualified under AEC-Q101 standards for automotive applications, it provides a compact solution for switching and amplification tasks.
Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the component meets all required automotive qualification standards for the intended application environment. Ensure compatibility with existing PCB footprint designs utilizing the SOT363 package dimensions.
Select this component when a compact dual transistor solution with integrated biasing is required. The 50 V voltage rating and 100 mA current capacity suit low-power switching applications. Consider the thermal performance and power dissipation limits relative to the PCB copper area available for heat spreading during operation.
This part belongs to Nexperia's portfolio of resistor-equipped transistors (RETs). These devices integrate base resistors to reduce component count and board space. The PUMD24-QX serves as the NPN/PNP complement to other RET families, providing matched characteristics for differential or push-pull configurations in space-constrained designs.
Direct substitutes include the PUMH24 (NPN/NPN) or PUMB24 (PNP/PNP) if polarity matches are acceptable. Verify pinout compatibility and electrical parameters such as VCEO and hfe when considering alternative manufacturers' equivalents.