PUMD2F

Overview

The PUMD2F is a dual NPN/PNP resistor-equipped transistor (BISS) manufactured by Nexperia USA Inc. It integrates an NPN and a PNP bipolar junction transistor within a single SOT-363 surface-mount package, with each base connected to a 22 kΩ resistor. The device features low collector-emitter saturation voltage for efficient switching. Key electrical parameters include a maximum collector-base voltage of 50 V, a maximum collector-emitter voltage of 50 V, and a maximum emitter-base voltage of 10 V. The continuous collector current is rated at 100 mA, with a power dissipation of 200 mW. It operates across a temperature range from -65 °C to +150 °C.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in base resistors in a compact dual package
• Features low collector-emitter saturation voltage for improved switching efficiency
• Supports direct interface with logic outputs without requiring external base drive components

Applications

• General-purpose switching applications in consumer electronics
• Logic level translation between different voltage domains
• Driver circuits for small loads such as LEDs or relays

Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm pinout compatibility and resistor values. Ensure the ordering part number matches the required SOT-363 variant. Confirm RoHS compliance status through the manufacturer's latest product change notifications before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require both NPN and PNP switching capabilities. The integrated 22 kΩ resistors simplify biasing networks compared to discrete solutions. Verify that the 100 mA current rating and 200 mW power dissipation meet the thermal requirements of the target application environment.

Part Context

The PUMD2F belongs to the PUMD series of resistor-equipped transistors from Nexperia. This series consolidates multiple discrete components into single packages to reduce PCB footprint and assembly complexity. The BISS technology emphasizes low saturation voltages, making it suitable for battery-powered devices where efficiency is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Verify cross-references with manufacturers such as Diodes Incorporated or ON Semiconductor using identical pinouts and electrical ratings.