SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PUMD3-QZ is a dual pre-biased NPN/PNP digital transistor array manufactured by Nexperia USA Inc. It integrates two transistors with internal base resistors into a compact surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal biasing resistors are typically 10kΩ for both the base and emitter connections. The component is designed for low-power switching applications, offering a maximum power dissipation of 200mW and a minimum DC current gain (hFE) of 30 at specified test conditions.
Verify the specific suffix against official Nexperia documentation to confirm automotive grade status and exact electrical tolerances. Ensure the ordering part number matches the required package variant and RoHS compliance specifications before finalizing procurement orders.
Select this component when a dual NPN/PNP solution with integrated biasing is required for space-constrained designs. Verify that the 50V voltage rating and 100mA current limit meet the specific load requirements of the target application circuit.
This part belongs to the PUMD3 series of pre-biased transistor arrays from Nexperia. The QZ suffix indicates an automotive-grade version compliant with AEC-Q101 standards, distinguishing it from standard commercial variants while maintaining similar electrical characteristics and packaging.
Direct substitutes include other Nexperia PUMD3 variants such as PUMD3,115 or PUMD3-QX, provided the specific suffix requirements for automotive qualification and packaging match the original design constraints.