PUMD30,115

PUMD30,115

$0.20
  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-

SKU:bb66f5b0bef9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMD30,115

Overview

The Nexperia PUMD30,115 is a 50 V, 100 mA NPN/PNP resistor-equipped double transistor (RET) housed in a SOT363 (SC-88) TSSOP6 plastic surface-mounted package. It integrates an NPN transistor with a 2.2 kΩ input bias resistor and a PNP transistor with an open emitter resistor. Key electrical parameters include a collector-emitter voltage of 50 V, output current capability of 100 mA per transistor, and total power dissipation of 300 mW at 25 °C ambient temperature. The device features a DC current gain (hFE) minimum of 30 at 20 mA and a collector-emitter saturation voltage maximum of 150 mV.

Feature Summary

  • AEC-Q101 qualified for automotive applications
  • Built-in bias resistors simplify circuit design
  • Reduces component count and pick-and-place costs

Applications

  • Low current peripheral driver
  • Cost-saving alternative for BC847BPN
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration, as standard data sheets may not detail reel or cut tape variations. Confirm RoHS compliance status through official Nexperia channels prior to procurement. Ensure the selected variant matches the required marking code for manufacturing traceability. Cross-reference the latest datasheet revision to validate any recent changes to pinning or thermal characteristics before finalizing supply agreements.

Selection Notes

Select this component when space-constrained designs require dual complementary transistors with integrated base biasing. The 2.2 kΩ internal resistor on the NPN side eliminates external components, reducing PCB area. Verify that the open emitter resistor configuration on the PNP side aligns with the target application's drive requirements. Consider the 300 mW total power dissipation limit when designing thermal management strategies for high-density layouts.

Part Context

The PUMD30 belongs to Nexperia's PUMD series of resistor-equipped double transistors. It serves as the NPN/PNP complement to the PUMH30 (NPN/NPN) and PUMB30 (PNP/PNP). This family utilizes the compact SOT363 package to provide cost-effective solutions for signal switching and logic interface applications where minimal footprint and simplified biasing are critical design constraints.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

PUMD30,115PUMD30,115
$0.20
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