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The Nexperia PUMD48 is a Resistor-Equipped Transistor (RET) double transistor containing one NPN and one PNP unit in a SOT363-3 package. It features a collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. The internal bias resistors are configured as R1 = 47 kΩ with R2 = 47 kΩ for the NPN section, and R1 = 2.2 kΩ with R2 = 47 kΩ for the PNP section. Total power dissipation is rated at 300 mW at 25 °C ambient temperature.
Verify the specific ordering suffix to confirm the correct packaging format required for your assembly line. Confirm RoHS compliance status and check for any recent Product Change Notifications regarding package or marking updates before finalizing procurement plans.
Select this component when space constraints require a dual transistor solution with integrated base biasing. Ensure the application current does not exceed the 100 mA limit and verify that the built-in resistor values match the required logic drive levels for both NPN and PNP sections.
This device belongs to the PUMD48 family of resistor-equipped double transistors manufactured by Nexperia. It utilizes Trench MOSFET technology principles adapted for bipolar structures within a small plastic SMD package designed for high-volume automated assembly processes.
Check datasheets for equivalent RET devices from other manufacturers. Verify pinout compatibility and ensure internal resistor tolerances meet the original design specifications before substituting.