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The Nexperia PUMD48 is a dual Resistor-Equipped Transistor (RET) containing one NPN and one PNP transistor in a TSSOP6 (SOT363-3) package. It features built-in bias resistors: TR1 (NPN) has R1=47 kΩ and R2=47 kΩ, while TR2 (PNP) has R1=2.2 kΩ and R2=47 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is 300 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and manufacturing site code. Ensure that the selected variant matches the required tape and reel specifications for automated assembly processes.
Select this component when space constraints require a compact dual-transistor solution with integrated biasing. Verify that the internal resistor values (47 kΩ and 2.2 kΩ) align with the target logic levels and drive requirements for the specific application interface.
The PUMD48 belongs to Nexperia's family of Resistor-Equipped Transistors (RETs). These devices are designed to replace discrete transistor and resistor networks, offering a streamlined alternative for digital switching and signal conditioning tasks in consumer electronics and industrial control systems.
Check pinout compatibility and electrical ratings before substituting with other RET models. Verify if alternative part numbers offer different resistor ratios or higher current capabilities suitable for the existing circuit design.
The NPN transistor (TR1) has a bias resistor R1 of 47 kΩ and R2 of 47 kΩ. The PNP transistor (TR2) has a bias resistor R1 of 2.2 kΩ and R2 of 47 kΩ.
The maximum total power dissipation (Ptot) for the device is 300 mW when the ambient temperature is 25 °C or lower.