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The PUMD6HX is a dual pre-biased NPN transistor array manufactured by Nexperia USA Inc. It integrates one NPN transistor with an internal base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. It operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 200 mW. The component is housed in a compact SOT-363 (SC-88) surface-mount package, designed for efficient space utilization in electronic circuits.
Verify the specific suffix '125' or similar against the manufacturer's official datasheet to confirm tape-and-reel quantities and packaging variants. Ensure the ordering part number matches the required resistance values and package type before finalizing procurement orders to avoid compatibility issues.
Select this component when a single NPN pre-biased transistor with specific 4.7 kΩ base and 47 kΩ emitter resistors is required. Compare electrical parameters such as hFE and Vce(sat) against alternative arrays like PUMD10 if different resistance ratios are needed. Confirm that the SOT-363 footprint aligns with the target PCB design constraints.
This part belongs to the PUMD series of pre-biased transistors from Nexperia. These devices combine bipolar junction transistors with integrated resistors to simplify circuit design. The PUMD6HX specifically provides an NPN configuration, distinguishing it from PNP-only or complementary PNP/NPN pairs found in other series members.
Potential substitutes include the PUMD10 or PUMD13 from the same manufacturer family. Verify that the replacement part offers identical resistance values (4.7 kΩ / 47 kΩ) and compatible pinout configurations to ensure direct interchangeability without PCB redesign.