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The PUMD9-QF is a resistor-equipped double transistor (RET) from Nexperia, featuring one NPN and one PNP transistor in a single SOT363 (SC-88/TSSOP-6) package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes built-in bias resistors: R1 is typically 10 kOhms and R2 is typically 47 kOhms. It offers a DC current gain (hFE) minimum of 100 at 5 mA/5 V. Transition frequencies are rated at 230 MHz for the NPN and 180 MHz for the PNP sections. Power dissipation is limited to 200 mW.
Verify the specific suffix 'QF' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure that the ordering information matches the required tape-and-reel specifications. Cross-reference the part number with authorized distributors to confirm availability and authenticity before finalizing procurement plans.
Select this component when a dual transistor solution with integrated biasing is required for space-constrained designs. The PUMD9-QF serves as a cost-saving alternative to discrete resistor-transistor combinations. Consider its 50V rating and 100mA current capability to ensure compatibility with the target load requirements.
This part belongs to the PUMD9 family of resistor-equipped double transistors. It complements other variants such as the PUMH9-Q (NPN/NPN) and PUMB9-Q (PNP/PNP). The Q-series designation indicates automotive qualification under AEC-Q101 standards, distinguishing it from standard commercial grade components within the same electrical specification range.
Direct substitutes include PUMD9-QX and PUMD9,115, which share identical electrical characteristics and pin configurations. Verify that any replacement maintains the same SOT363 footprint and AEC-Q101 qualification if automotive reliability is required.