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The PUMD9,115 is a dual resistor-equipped transistor (RET) from Nexperia, integrating an NPN and a PNP transistor within a single SOT363-3 (SC-88/TSSOP6) surface-mounted package. It features built-in bias resistors with R1 at 10 kΩ and R2 at 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA per transistor. Total power dissipation is rated at 200 mW per transistor and 300 mW for the entire device at 25 °C ambient temperature. Operating junction temperatures range from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging configuration. Confirm that the requested quantity aligns with standard reel or cut-tape availability requirements specified by authorized distributors. Ensure compliance with RoHS and REACH directives as stated in the product data sheet prior to final procurement decisions.
Select this component when space constraints require a dual-transistor solution with integrated biasing. The SOT363-3 package offers a small footprint suitable for dense PCB layouts. Consider the 50 V voltage rating and 100 mA current capability to ensure adequate headroom for the intended load. Verify thermal management requirements based on the specified power dissipation limits under expected operating conditions.
The PUMD9 belongs to Nexperia's family of Resistor-Equipped Transistors (RETs). Complementary variants include the PUMH9 (NPN/NPN) and PUMB9 (PNP/PNP). This specific part number denotes the NPN/PNP combination housed in the TSSOP6 plastic surface-mounted package, designed for general-purpose digital switching and signal control applications.
Direct functional substitutes include the PUMH9 for NPN/NPN configurations and the PUMB9 for PNP/PNP configurations. For single-transistor needs, consider the PUMD9-QX variant which is AEC-Q101 qualified. Ensure pin compatibility and electrical ratings match before substituting.