PUMD9,165

Overview

The Nexperia PUMD9,165 is a Resistor-Equipped double Transistor (RET) containing one NPN and one PNP transistor within a TSSOP6 (SOT363-3) package. It features built-in bias resistors with R1 at 10 kΩ and an R2/R1 ratio of 4.7. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 200 mW per transistor and 300 mW for the device. Operating temperatures range from -65 °C to +150 °C.

Feature Summary

• Integrates dual NPN/PNP transistors with pre-biased resistors to reduce component count
• Provides simplified circuit design through integrated input biasing
• Offers low pick-and-place costs due to compact SMD packaging

Applications

• Digital applications in automotive and industrial segments
• Cost-saving alternative for BC847/BC857 series in digital circuits
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm the exact reel or cut tape configuration intended for production. Confirm RoHS compliance status and REACH SVHC declarations prior to integration into final assemblies to ensure regulatory adherence.

Selection Notes

Select this component when space-constrained designs require dual complementary switching capabilities. Ensure the 50 V breakdown voltage and 100 mA current limits align with load requirements. Consider the thermal resistance characteristics if operating near maximum ambient temperature limits.

Part Context

This part belongs to the PUMD9 family of resistor-equipped double transistors. Complementary configurations include the PUMH9 (NPN/NPN) and PUMB9 (PNP/PNP). The device utilizes the SOT363-3 plastic surface-mounted package, providing a compact solution for high-density circuit board layouts.

Replacement Considerations

Direct functional substitutes include the PUMH9 for NPN/NPN configurations and the PUMB9 for PNP/PNP configurations. Verify pin compatibility and electrical parameters before substituting with other RET families.