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The Nexperia PUMH1/DG/B3,115 is a dual NPN resistor-equipped transistor (RET) housed in a SOT-363 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify digital circuit design. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device features a minimum DC current gain (hFE) of 30 at specified test conditions. Total power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. The component is AEC-Q101 qualified for automotive applications.
Verify the specific suffix /DG/B3 against official Nexperia documentation to confirm pinout configuration and internal resistor values, as suffixes often denote specific mechanical or electrical variants within the PUMH1 series. Ensure the source document explicitly lists this part number to avoid confusion with standard PUMH1 variants that may have different resistor tolerances or package markings.
Select this component when space-constrained designs require dual NPN switching with integrated biasing. Confirm that the 100 mA output current and 50 V voltage ratings meet the load requirements. Verify compatibility with the target PCB footprint for the SOT-363 package and ensure the thermal management strategy supports the 200 mW power dissipation limit under expected operating conditions.
This part belongs to the Nexperia PUMH1 series of dual NPN resistor-equipped transistors. These devices are designed to replace discrete transistor and resistor networks, offering a compact solution for digital switching tasks. The series is widely used in consumer electronics and automotive systems where board space is limited and manufacturing efficiency is prioritized.
Check for direct equivalents such as other PUMH1 variants from Nexperia or cross-brand RETs like those from Onsemi or Diodes Inc. Ensure pinout compatibility and identical electrical characteristics, particularly hFE and resistor values, before substitution.