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The Nexperia PUMH10-Q is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88) plastic surface-mounted package. It integrates two NPN transistors with built-in bias resistors, specifically R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature. Qualified under AEC-Q101, it is designed for automotive applications.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the requested part number matches the exact resistor values and package variant required for the design. Ensure compliance with automotive qualification standards if used in vehicle systems.
Select this component when space constraints require replacing discrete transistors and resistors with a single integrated solution. Verify that the 50 V collector-emitter voltage and 100 mA current limits meet circuit requirements. Consider the thermal resistance characteristics for heat dissipation on the PCB footprint.
This device belongs to Nexperia's family of resistor-equipped double transistors. Complementary parts include the PNP/PNP PUMB10-Q and the NPN/PNP PUMD10-Q. All variants share the same SOT363-3 package form factor and are designed for similar low-power switching and logic interface applications.
Direct functional substitutes within the same package include PUMH10-QAX if verified by manufacturer cross-reference lists. Ensure any replacement maintains the 2.2 kΩ input resistor value and 47 kΩ feedback ratio to preserve circuit timing and biasing.