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Product Detailed Parameters
- Description：PUMH10-Q/SOT363/SC-88
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：230MHz
- Power - Max：200mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
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Overview
The PUMH10-Q is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88) plastic surface-mounted device package. It integrates two NPN transistors with built-in bias resistors, specifically R1 = 2.2 kΩ and R2 = 47 kΩ per transistor. The device supports a collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature. The component is qualified according to AEC-Q101 standards for automotive applications.
Feature Summary
- Integrates dual NPN transistors with fixed internal bias resistors to simplify circuit design and reduce component count.
- Qualified according to AEC-Q101 standards, making it suitable for demanding automotive applications.
- Utilizes a compact SOT363-3 package to minimize PCB footprint and reduce pick-and-place costs.
Applications
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the AEC-Q101 qualification aligns with target automotive reliability requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Selection Notes
Select this component when space constraints require integrating dual transistors and biasing networks into a single small outline package. Consider the 50 V collector-emitter voltage rating and 100 mA current capability against load requirements. Evaluate the fixed resistor values against input drive levels to ensure proper saturation and switching performance.
Part Context
The PUMH10-Q belongs to Nexperia's family of NPN/NPN Resistor-Equipped Transistors designed for digital logic interfacing. It serves as a direct replacement for discrete transistor-resistor combinations in signal conditioning and level shifting circuits. The device complements other RET variants like the PUMD10-Q and PUMB10-Q within the same product line.
Replacement Considerations
Direct functional equivalents include the PUMD10-Q (NPN/PNP complement) and PUMB10-Q (PNP/PNP complement). Verify pinout compatibility and resistor tolerance specifications when substituting with similar RET devices from other manufacturers.
FAQ
What are the specific values of the built-in bias resistors?
Each transistor features a base resistor (R1) of 2.2 kΩ and a collector-base feedback resistor (R2) of 47 kΩ.
Is the PUMH10-Q suitable for automotive electronics?
Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum total power dissipation for the device?
The total power dissipation is rated at 300 mW when the ambient temperature is 25 °C.
