SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia PUMH10/ZLH is a dual NPN Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mount package. It integrates two NPN transistors with built-in bias resistors, specifically R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 10 mA and 5 V, and a transition frequency (fT) typical value of 230 MHz.
Verify the specific ordering suffix /ZLH against official Nexperia documentation to confirm tape and reel specifications or manufacturing site codes. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the selected distributor provides traceable source data matching the PUMH10 product family specifications.
Select this component when a dual NPN configuration with integrated base biasing is required. The 2.2 kΩ input resistor suits standard logic interface levels. Verify that the 50 V breakdown voltage and 100 mA current limits meet the target application's operational stress conditions. Consider the SOT363-3 footprint constraints during PCB layout planning.
The PUMH10 belongs to Nexperia's RET family, offering pre-biased transistor solutions. Complementary variants include the PUMD10 (NPN/PNP) and PUMB10 (PNP/PNP). This series replaces discrete transistor and resistor networks, simplifying assembly processes while maintaining consistent electrical performance across digital switching applications.
Direct functional substitutes within the same package include other Nexperia RETs like the PUMH11 or PUMH12, provided their bias resistor values match the circuit requirements. Cross-manufacturer replacements require verification of pinout compatibility, voltage ratings, and thermal characteristics.