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The Nexperia PUMH10/ZLX is a dual NPN Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mount package. It integrates two NPN transistors with built-in bias resistors, specifically R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 10 mA and 5 V, and a transition frequency typical value of 230 MHz.
Verify the specific ordering suffix /ZLX against official Nexperia documentation to confirm tape and reel specifications or marking codes. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the supplier provides valid traceability data matching the manufacturer's product data sheet requirements.
Select this component when space-constrained designs require dual NPN switching with integrated base drive. Compare the 2.2 kΩ input resistance against load requirements to ensure adequate drive current. Verify that the 50 V breakdown voltage exceeds the maximum circuit operating voltage under all transient conditions.
The PUMH10 belongs to Nexperia's RET family, offering complementary PNP/PNP (PUMB10) and NPN/PNP (PUMD10) variants. These devices utilize the SOT363-3 footprint to replace multiple discrete components. The series is designed for general-purpose digital applications where board space and assembly efficiency are critical design constraints.
Direct functional substitutes within the same package include PUMD10 and PUMB10. Verify pin compatibility and resistor values before substitution. Cross-reference thermal resistance and breakdown voltages to ensure equivalent performance in the target application.